Shallow Positive Acceptor in Germanium Doped with Deep Zinc Impurity
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概要
- 論文の詳細を見る
An A" center, a positively charged acceptor, is observed below 2.8 K in far-in-frared photoconductivity measurement on Zn doped Ge under exposure to the roomtemperature black body radiation. The hole binding energy of the A" center isestimated as 1.9meV from the low energy threshold of photoconductivity. Lowtemperature photoconductivity for the sample with low impurity concentration(7V.=l.2Xl0"Clll ') is due to isolated A" centers. The photoconductivity peakshifts to higher energy with increase of impurity concentration. The shifted peak cor-responds to the transition from an A" related complex to the valence band. Magneto-oscillations of photoconductivity due to isolated A" centers are first observed. Thepeak photon energies converge to 1.9 meV in the zero field limit.
- 社団法人日本物理学会の論文
- 1986-08-15
著者
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山崎 陽司
京都府歯科医師会公衆衛生・産業歯科部
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Kobayashi Michihiro
Department Of Material Physics
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Otsuka Eizo
Department of Applied Physics, Osaka University
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NAKATA Hiroyasu
Department of Physics, Graduate School of Science, Osaka University
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Ichikawa Y
Matsushita Electric Ind. Co. Ltd. Kyoto Jpn
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Ichikawa Y
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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ICHIKAWA Yohei
Department of Physics,College of General Education,Osaka University
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Nakata H
Osaka Univ.
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Nakata Hiroyasu
Department Of Molecular Cell Signaling Tokyo Metropolitan Institute For Neuroscience
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Nakata Hiroyasu
Department Molecular Cell Signaling Tokyo Metropolitan Institute For Neuroscience
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Kobayashi Michihiro
Department Of Agricultural Chemistry Faculty Of Agriculture Kyoto University
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Otsuka Eizo
Department Of Applied Physics Osaka City University
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Nakata Hirofumi
Department of Physics,College of General Education,Osaka University
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