Photoluminescenee Investigation of Donor-Level Deepening in GaAs under Hydrostatic Pressure
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概要
- 論文の詳細を見る
Hydrostatic pressure dependence of photoluminescence spectra in Se-doped GaAs has been measured at 1.5 K by using a diamond anvil cell up to 48 kbar. Two emission peaks due to bound-exciton annihilation and donor-acceptor recombination are observed under pressure. With increasing pressure the donor binding energy is found to become as deep as approximately 115 meV at 41 kbar where the crossover of the Γ_1-X_1 conduction band edges occurs.
- 社団法人応用物理学会の論文
- 1983-10-20
著者
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Kobayashi Michihiro
Department Of Material Physics
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Narita Shin-ichiro
Department Of Material Physics
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YOKOYAMA Teruo
Department of Material Physics,Faculty of Engineering Science,Osaka University
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Kobayashi Michihiro
Department Of Agricultural Chemistry Faculty Of Agriculture Kyoto University
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Yokoyama Teruo
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Yokoyama Teruo
Department of Chemistry, Graduate School of Science, The University of Tokyo
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