Effect of Impurity Interaction upon Ionization Energy of Donor-Electrons in Germanium

概要

論文の詳細を見る
In order to seek the origin of far-infrared photoconductivity responses in doped germanium, observed in the energy region less that the ionization energy of the isolated donor, the effects of the donor assemblies have been studied. The donor assemblies are assumed to be composed by two or three impurity atoms in the lattice sites, separating from each others in distance of several times of the effective Bohr radius of the donor. The ground state energies of electrons in neutral donor assemblies and those of electrons in donor assembly ions (+) are calculated by the LCAO method. The ionization energy of the electron of the donor assembly is obtained to be smaller than that of the isolated donor. Assuming the random distribution of donors, photoconductivity spectra of the donor assembly have been theoretically looked for, and a qualitative agreement between the calculation and the experiment was obtained. The photo-response extended to the appreciably low energies in the photoconductibity spectra is ascribed to the electron transition from the donor assemblies with reduced ionization energies to the conduction band.
社団法人日本物理学会の論文
1973-09-05