Far-Infrared Photoconductivity in Gallium Arsenide
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概要
- 論文の詳細を見る
The temperature and impurity concentration dependences of the far-infraredphotoconductivity in GaAs crystals have been studied. The small ionization energyof the 2p excited state experimentally estimated is well explained by use of the"cascade capture theory". The effect of the increase of the impurity concentrationon the photoconductive response is ascribed to the decrease of the ability of theelectron-transfer of the high excited states. The impurity conduction through the"excited state band" is also discussed.
- 社団法人日本物理学会の論文
- 1977-01-15
著者
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NARITA Shin-ichiro
Department of Material Physics, Faculty of Engineering Science, Osaka University
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Narita Shin-ichiro
Department Of Material Physics
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Miyao Masanobu
Department Of Electronics Kyushu University
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MIYANO Masanobu
Department of Electronics, Kyushu University
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Miyano Masanobu
Department Of Material Physics Faculty Of Engineering Science Osaka University:central Research Labo
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