Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization
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概要
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Indentation-induced solid-phase crystallization (SPC) was proposed to achieve position-controlled crystal growth of Si1-xGex ($x$: 0–1) on insulating substrates. The results demonstrated that large SiGe grains (${>}2$ μm) over the entire range of Ge fractions were grown at controlled positions without using catalyst metals. In addition, crystal regions were predominantly oriented in the (111) direction for samples with low Ge fractions (${<}30$%), while crystal regions became randomly oriented with increasing Ge fraction (${>}30$%). Although the incubation times of indentation-induced SPC are longer than those of Ni-imprint-induced SPC, indentation-induced SPC is attractive because the crystal grains do not include metals which would degrade the transistor performance.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-03-25
著者
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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Toko Kaoru
Department Of Electronics Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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Toko Kaoru
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Miyao Masanobu
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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