High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth
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概要
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The development of high-carrier-mobility Ge-channel thin-film transistors (TFTs) is desired to realize advanced system-in-displays. To achieve the development of single-crystalline Ge films on insulating substrates, we have developed the directional melting growth process of amorphous Ge by using polycrystalline Si islands as growth seeds. Defect-free single-crystalline Ge stripes of 400 μm length are realized, and high-hole-mobilities of more than 1000 cm2 V-1 s-1 are demonstrated in the entire lateral growth region. This method opens up the possibility of fabricating high-speed Ge-channel TFTs for system-in-displays.
- 2010-04-25
著者
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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Toko Kaoru
Department Of Electronics Kyushu University
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Tanaka Takanori
Department Of Adaptive Machine Systems Osaka University
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Kaoru Toko
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Masanobu Miyao
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Takanori Tanaka
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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