Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
スポンサーリンク
概要
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The effects of local Ge insertion on the solid-phase crystallization (SPC) of a-Si films have been investigated. Three types of stacked structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were annealed at 600°C. For structure (a) with thin (${\sim}5$ nm) Ge films, Ge atoms completely diffused into both sides of a-Si regions, and SPC was not enhanced. However, when Ge thickness was increased to more than 10 nm, Ge atoms were localized. Such localization became significant for structures (b) and (c) even for samples with thin Ge films. In addition, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in Ge layers, and then propagated into a-Si layers. Therefore, interface-nucleation-driven SPC becomes possible using structures (b) and (c). This will be a useful tool in achieving oriented Si growth on SiO2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Tsunoda Isao
Department Of Electronics Kyushu University
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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KENJO Atsushi
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
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Nagatomo Kei
Department Of Electronics Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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Yamaguchi Shinya
Central Research Laboratory Hitachi Ltd.
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Tsunoda Isao
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
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Yamaguchi Shinya
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185-8601, Japan
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