Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator
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概要
- 論文の詳細を見る
The effects of Ge fraction and annealing temperature on the metal-induced lateral crystallization (MILC) of amorphous SiGe films on an insulator have been investigated. It was shown that the progress of the MILC of amorphous SiGe was suppressed by spontaneous nucleation, which was accelerated with increases in Ge fraction and annealing temperature. Thus, MILC could not proceed for amorphous SiGe with high Ge fractions (${>}70$%) at high temperatures (${>}500$ °C). Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (${<}400$ °C). As a result, the MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0–100%), and large polycrystalline silicon–germanium (poly-SiGe) regions (${>}20$ μm) could be realized for even high Ge fractions (${>}70$%). Transmission electron microscopy suggested that the mechanism of MILC of amorphous SiGe (a-SiGe) with medium and high Ge fractions (${>}40$%) is different from that of a-Si.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-03-25
著者
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
-
Toko Kaoru
Department Of Electronics Kyushu University
-
Miyao Masanobu
Department Of Electronics Kyushu University
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Kanno Hiroshi
Department Of Electronics Kyushu University
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Kuwano Noriyuki
Depatment of Applied Science for Electronics and Materials, Kyushu University, Fukuoka 816-8580, Japan
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Masumori Shunji
Depatment of Applied Science for Electronics and Materials, Kyushu University, Fukuoka 816-8580, Japan
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Itakura Masaru
Depatment of Applied Science for Electronics and Materials, Kyushu University, Fukuoka 816-8580, Japan
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