Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• SADOH Taizoh

  Department of Electronics, Kyushu University

• MIYAO Masanobu

  Department of Electronics, Kyushu University

• Tsunoda Isao

  Department Of Electronics Kyushu University

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• ENOKIDA Toyotsugu

  Analyses of Evaluation Center, Fukuryo Semicon Engineering Corporation

• IKISHIMA Masanori

  Department of Electronics, Kyushu University

• NINOMIYA Masaharu

  SUMCO

• NAKAMAE Masahiko

  SUMCO

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Miyao M

  Department Of Electronics Kyushu University

• Enokida Toyotsugu

  Analyses Of Evaluation Center Fukuryo Semicon Engineering Corporation

• Ikishima Masanori

  Department Of Electronics Kyushu University

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• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
• Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
• Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
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• Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
• Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers
• Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure
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