Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator

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概要

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• The metal-induced low-temperature (${\leq}550$°C) crystallization of a-Si1-xGex ($0 \leq x \leq 1$) on SiO2 has been investigated. A Ge-fraction-dependent crystal growth was observed. In the case of a low-Ge fraction, plane growth dominated, the velocity of which was enhanced by 80% with increasing Ge fraction from 0 to 20%. This produced strain-free poly-SiGe with large grains (18 μm). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (40–60%). By optimizing the growth conditions ($x$: 0.4, annealing: 450°C, 20 h), very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained. These new polycrystalline SiGe films on insulator should be used for system-in-display, three-dimensional ultra large-scall integrated circuits, and novel one-dimensional wires.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Tsunoda Isao

  Department Of Electronics Kyushu University

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• KENJO Atsushi

  Department of Electrical Engineering,Faculty of Engineering,Kyushu University

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Kanno Hiroshi

  Department Of Electronics Kyushu University

• Yamaguchi Shinya

  Central Research Laboratory Hitachi Ltd.

• Tsunoda Isao

  Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan

• Kanno Hiroshi

  Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan

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