Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate

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概要

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• Epitaxial growth of the ferromagnetic silicide Fe3Si on Si substrates was investigated using molecular beam epitaxy. X-ray diffraction (XRD) measurements revealed that the Fe3Si phase was formed at 60–300 °C, and the FeSi phase was formed at 400 °C. From the results of XRD and transmission electron microscopy measurements, it was found that the Fe3Si(111) layers were epitaxially grown on Si(111) substrates, while random poly-crystal Fe3Si layers were formed on Si(100) substrates. Detailed XRD measurements showed that a small amount of DO3-type Fe3Si was formed together with the B2-type Fe3Si. Vibrating sample magnetometer measurements revealed that Fe3Si(111) layers on Si(111) substrates have in-plane magnetic anisotropy with a period of 180°.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• KENJO Atsushi

  Department of Electrical Engineering,Faculty of Engineering,Kyushu University

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Takeuchi Hisashi

  Department Of Anatomy School Of Medicine Tokushima University

• Ueda Koji

  Department Of Electronics Kyushu University

• Takeuchi Hisashi

  Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan

• Ueda Koji

  Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan

• Kenjo Atsushi

  Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan

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