Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
スポンサーリンク
概要
- 論文の詳細を見る
Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (${<}500$ °C). The TFTs showed good ambipolar operation characteristics with $I_{\text{on}}/I_{\text{off}}$ of ${\sim}10^{5}$ for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-30
著者
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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Ikeda Keiji
Fujitsu Laboratories Ltd.
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KENJO Atsushi
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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Ohyama Yasuhiro
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
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Sadoh Taizoh
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
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Ikeda Keiji
Fujitsu Laboratories, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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