FEM Analysis for Nonuniform Yielding Processes in Mild Steel Plates under Stretching
スポンサーリンク
概要
- 論文の詳細を見る
This paper deals with numerical simulations for nonuniform yielding processes in mild steel through use of the finite element method. The yield drop is taken into account in the simulation by means of Hahn's constitutive equation. The yielding processes in straight and notched specimens are discussed based on the simulation. The simulated result agrees well with the actual behavior of nonuniform yielding observed in annealed mild steel. The simulation also shows that the nonuniform yielding phenomenon is relevant to yield-drop behavior of the material element.
- 一般社団法人日本機械学会の論文
- 1992-01-15
著者
-
YOSHIDA Fusahito
Faculty of Engineering, University of Hiroshima
-
Yamashita Yoshimi
Fujitsu Laboratories Ltd.
-
Yamashita Yoshimi
Sharp Co. Ltd.
-
Ohmori Masanobu
Faculty Of Engineering. Hiroshima University
-
Ohmori Masanobu
Faculty Of Engineering Hiroshima University
-
ITOH Misao
Faculty of Engineering, Chiba University
-
Itoh Misao
Faculty Of Engineering Chiba University
-
Yoshida F
Faculty Of Engineering. Hiroshima University
-
Yoshida Fusahito
Faculty Of Engineering Hiroshima University
関連論文
- Effects of the Change of the Maximum Stress and the Stress Ratio on the Cyclic Creep Behaviors
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
- DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
- Mechanical Properties of a Low Carbon Steel Shock-10aded by an Explosive
- FEM Analysis for Nonuniform Yielding Processes in Mild Steel Plates under Stretching
- Bi-axial Strain Accumulations in Mechanical Ratcheting
- Effects of Variations of the Maximum Stress and Stress Ratio on the Behaviors of Biaxial Mechanical Ratcheting
- Sealing Characteristics of Gland Packing : 2nd Report, Analysis of the Distribution of the Contact Pressure and the Frictional Force in Tightened Packing : Vibration, Control Engineering, and Engineering for Industry, New materials, new energy, biotechnol
- Fatigue Crack Propagation and Final Fracture of High Speed Rotating Disk under Cyclic Start and Stop
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
- Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
- InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Sealing Characteristics of Gland Packing : 1st Report, A Testing Method of the Mechanical Properties of Packings and Some Experimental Results in Asbestoid and Graphitic Packings : Vibration, Control Engineering, and Engineering for Industry, New material