Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

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概要

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• We fabricated non-recessed-gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) with a gate length $L_{\text{g}}$ of 120 nm. As gate metals, Ni/Pt/Au and Mo/Pt/Au were used. The Ni/Pt/Au-gate HEMTs with rapid thermal annealing (RTA) at 500°C were normally-off at a gate-source voltage $V_{\text{gs}}$ of 0 V, indicating E-mode operation. Moreover, the Mo/Pt/Au-gate HEMTs also showed E-mode device operation without RTA. The fabricated E-mode HEMTs with both gate metals showed high RF performance. We obtained a cutoff frequency $f_{\text{T}}$ of more than 50 GHz and a maximum oscillation frequency $f_{\text{max}}$ of approximately 100 GHz.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• MATSUI Toshiaki

  Communication Research Laborator

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Yamashita Yoshimi

  Fujitsu Laboratories Ltd.

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• Ikeda Keiji

  Fujitsu Laboratories Ltd.

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• HIGASHIWAKI Masataka

  Communications Research Laboratory

• Matsui Toshiaki

  Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Higashiwaki Masataka

  Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Ikeda Keiji

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Yamashita Yoshimi

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

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