A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_<1-x>As Heterojunctions
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概要
- 論文の詳細を見る
Studies of field-effect control of the high mobility electrons in MBE-grown selectively doped GaAs/n-Al_xGa_<1-x>As heterojunctions are described. Successful fabrication of a new field-effect transistor, called a high electron mobility transistor (HEMT), with extremely high-speed microwave capabilities is reported.
- 社団法人応用物理学会の論文
- 1980-05-05
著者
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NANBU Kazuo
Fujitsu Laboratories Ltd.
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Nanbu Kazuo
Fujitsu Laboratories Limited
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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MIMURA Takashi
Fujitsu Laboratories Lid.
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Fujii Toshio
Fujitsu Laboratories Lid.
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