Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-10-20

著者

• Saito J

  Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn

• Saito Junji

  Fujitsu Laboratories Limited

• NANBU Kazuo

  Fujitsu Laboratories Ltd.

• ISHIKAWA Tomonori

  Fujitsu Laboratories LTD.

• Nanbu Kazuo

  Fujitsu Laboratories Limited

• Hiyamizu Satoshi

  Fujitsu Limited

• Hiyamizu Satoshi

  Fujitsu Laboratories Limited

• Ishikawa Tomonori

  Fujitsu Laboratories Limited

関連論文

• Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
• Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
• Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
• GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
• Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
• A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
• Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
• Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
• Reply to the Comment by H.L. Stormer
• The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Magnetoconductance Investigations of Al_xGa_As/GaAs Heterojunction FET in Strong Magnetic Fields
• Galvanomagnetic Study of 2-Dimensional Electron Gas in Al_xGa_As/GaAs Heterojunction FET
• Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
• Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
• Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
• Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
• Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
• Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
• Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
• Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
• Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
• Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
• Recording Power Characteristics of 130mm Overwritable MO Disk by Laser Power Modulation Method
• Direct Overwrite by Light Power Modulation on Magneto-Optical Multi-Layered Media : DRIVE TECHNIQUE
• Optimum Recording Conditions of Direct Overwrite Magneto-Optical Disk Drive for the Widest Power Margin
• Modeling Thermal Diffusion of Scanned and Focused Laser Power on Direct Overwrite Magneto-Optical Disk
• High Electron Mobility Transistor Logic
• Enhancement-Mode High Electron Mobility Transistors for Logic Applications
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
• Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
• A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
• Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
• 2 GB/130 mm Capacity Direct-Overwrite Magneto-Optical Disk
• C/N Improvement of Direct Overwrite Magneto-Optical Disk by Adding a GdFeCo Readout Layer : Media
• Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
• Formation of DX Centers by Heavy Si Doping in MBE-Grown Al_xGa_As with Low Al Content
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
• Stress-Released MBE Growth on GaAs on Si (001) with a Si-GaAs Superlattice Buffer
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions

もっと見る 閉じる

スポンサーリンク