Formation of DX Centers by Heavy Si Doping in MBE-Grown Al_xGa_<1-x>As with Low Al Content
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概要
- 論文の詳細を見る
The dependence of shallow donors and DX centers on Si doping concentration in Al_xGa_<1-x>As layers grown by MBE has been investigated. In the shallow-to-DX transition region around x=O.2, the concentration ratio of DX centers to shallow donors was proved to have strong dependence on Si doping concentration. While few DX centers were observed in the samples with an Si concentration of about 1×10^<17> cm^<-3> DX centers became dominant above 1×10 cm^<-3>. These results can be explained by the effect of electron distribution between Γ-valley and DX center level.
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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KONDO Kazuo
Fujitsu Laboratories Ltd.
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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Ishikawa Tomonori
Fujitsu Laboratories Limited
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Yamamoto Tohru
Fujitsu Laboratories Limited
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Kondo Kazuo
Fujitsu Laboratories Limited
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