GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-04-20
著者
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Ishikawa T
Riken Harima Institute
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Saito J
Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn
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Saito Junji
Fujitsu Laboratories Limited
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NANBU Kazuo
Fujitsu Laboratories Ltd.
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KONDO Kazuo
Fujitsu Laboratories Ltd.
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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Saito Junji
Fujitsu Laboratories Ltd.
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Nanbu Kazuo
Fujitsu Laboratories Limited
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Ishikawa T
Kyushu Univ. Fukuoka Jpn
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Saito J
New Business Development Department Nikon Corporation In Hitachi Maxell
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Saito Jun
Nikon Corp. New Business Development Department
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Kondo K
Fujitsu Laboratories Ltd.
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Ishikawa Tetsuya
Riken Harima Institute
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Ishikawa Tomonori
Fujitsu Limited
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Ishikawa Tomonori
Fujitsu Laboratories Limited
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Nanbu K
Fujitsu Laboratories Ltd.
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Kondo Kazuo
Fujitsu Laboratories Limited
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- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
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