Ishikawa T | Kyushu Univ. Fukuoka Jpn

スポンサーリンク

概要

関連著者

もっと見る

著作論文

InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
Time-Delayed Interferometry with Nuclear Resonant Scattering of Synchrotron Radiation
Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
X-Ray Standing Wave Analysis of GaAs/Si Interface
Focusing Properties of a Linear-Phase Bragg-Fresnel Lens
A Plane Wave Diffraction on an Amplitude-Phase Laue Microinterferometer
X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
An X-Ray Phase Plate Using Bragg-Case Diffraction
First Application of X-ray Refraction-based Computed Tomography to a Biomedical Object(Physiology)
Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions
Novel Analysis System of Imaging-Plate Plane-Wave X-Ray Topography for Characterizing Lattice Distortion in Silicon
Switching of Photon Helicities in the Hard X-Ray Region with a Perfect Crystal Phase Retarder
Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
Study of 4p Electronic States Related to Magnetic Phase Transition in Mn_3MC (M=Zn and Ga) by X-ray Magnetic Circular Dichroism(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
Transmission-Type X-Ray Phase Retarder Using Ge Crystal in Laue Diffraction Geometry
Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
Generation Rule of the Slip Dislocation in LEC GaAs Crystal
The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method
Effects of GaAs-Surface Roughness on the Electron-Beam Patterning Characteristics of a Surface-Oxide Layer
In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
In situ Electron-beam Processing for GaAs/AlGaAs Nano-structures
Improvement in Patterning Characteristics of GaAs Oxide Mask Used in In Situ Electron-Beam Lithography
In Situ GaAs Patterning and Subsequent Molecular-Beam Epitaxial Regrowth of AlGaAs/GaAs Wire Structures
Electron Beam Patterning Mechanism of GaAs Oxide Mask Layers Used in In Situ Electron Beam Lithography
Cathodoluminescence of Wirelike GaAs/AlAs Quantum Well Structures Grown on Substrates Patterned with [001] Mesa Stripes
Characterization of In Situ Cl_2-Etched GaAs Buffer Layers and Regrown GaAs/AlGaAs Quantum Welts
Helicity-Modulation Technique Using Diffractive Phase Retarder for Measurements of X-ray Magnetic Circular Dichroism
Laue-Case Plane Wave Topography Using Synchrotron Radiation to Reveal Microdefects in a Thinned Silicon Crystal
Observation of Microdefects in Thin Silicon Crystals by Means of Plane-Wave Topography Using Synchrotron X-Radiation
Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
Photoluminescence Study of Electron-Beam-Induced Damage in GaAs/AlGaAs Quantum-Well Structures
Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography
Low-Pressure Measurement Using an Ultrasonic Sensor II

もっと見る

スポンサーリンク