TAMURA Masao | Optoelectronics Technology Research Laboratory
スポンサーリンク
概要
関連著者
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TAMURA Masao
Optoelectronics Technology Research Laboratory
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Tamura Masao
Optoelectronic Research Laboratory:(present Address) Angstrom Technology Partnership
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Tamura M
Univ. Tokyo Tokyo Jpn
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Hashimoto A
Tokyo Ohka Kogyo Co. Ltd. Kanagawa Jpn
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Hashimoto Akihiro
Optoelectronics Technology Research Laboratory
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama N
Research And Development Center Toshiba Corporation
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Yodo Tokuo
Optoelectronics Technology Research Laboratory
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Saitoh T
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Saitoh T
Ntt Basic Research Laboratories Physical Science Laboratory
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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SAITOH Tohru
Optoelectronics Technology Research Laboratory
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淀 徳男
大阪工業大学工学部電子情報通信工学科
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淀 徳男
大阪工大 工
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Palmer Joyce
Optoelectronics Technology Research Laboratory
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SUGIYAMA Naoharu
Optoelectronics Technology Research Labolatry
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Ishikawa T
Riken Harima Institute
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ISU Toshiro
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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SUGIYAMA Naoharu
Research and Development Center, Toshiba Corporation
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Sugiyama Naoharu
Toshiba Research and Development Center, Toshiba Corporation
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Tanaka N
Nagoya Univ. Nagoya Jpn
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Ishikawa T
Kyushu Univ. Fukuoka Jpn
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Lo´pez M
Optoelectronics Technology Research Laboratory
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Isu T
Mitsubishi Electric Corp. Amagasaki‐shi Jpn
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Isu T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Isu Toshiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Isu Toshiro
Optoelectronics Technology Research Laboratory
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TANAKA Nobuyuki
The Kochi Prefectural Makino Botanical Garden
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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Tanaka N
Environmental Sci. Res. Niigata Niigata Jpn
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Ishikawa Tetsuya
Riken Harima Institute
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Nomura Yoshinori
Central Research Laboratory Mitsubishi Electric Corporation
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Ishikawa Tomonori
Fujitsu Limited
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Ishikawa Tomonori
Optoelectronics Technology Research Laboratory
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Morishita Yoshitaka
Optoelectronics Technology Research Laboratory
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Lopez Maximo
Optoelectronics Technology Research Laboratory
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TANAKA Nobuyuki
Optoelectronics Technology Research Laboratory
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MATSUYAMA Isamu
Optoelectronics Technology Research Laboratory
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NANBU Yoshihiro
Opto-Electronics Research Laboratories, NEC Corporation
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GOTO Shigeo
Optoelectronics Technology Research Laboratory
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NOMURA Yasuhiko
Optoelectronics Technology Research Laboratory
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KATAYAMA Yoshifumi
Optoelectronics Technology Research Laboratory
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Goto S
Central Research Laboratory Hitachi Ltd.
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Katayama Y
Murata Manufacturing Co. Ltd.
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Matsuyama Isamu
Optoelectronics Technology Research Laboratory:(present Address) Semiconductor Technology Laboratori
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Tanaka N
The Kochi Prefectural Makino Botanical Garden
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Nanbu Yoshihiro
Opto-electronics Research Laboratories Nec Corporation
著作論文
- In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Real-Time Observation of AlAs/GaAs Superlattice Growth by Coaxial Impact Collision Ion Scattering Spectroscopy
- Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer
- In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
- Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
- Growth and Characterization of GaAs/GaSe/Si Heterostructures
- GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
- In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
- Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
- Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy