Ishikawa Tomonori | Optoelectronics Technology Research Laboratory
スポンサーリンク
概要
関連著者
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Ishikawa Tomonori
Optoelectronics Technology Research Laboratory
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Ishikawa T
Riken Harima Institute
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Ishikawa T
Kyushu Univ. Fukuoka Jpn
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TANAKA Nobuyuki
The Kochi Prefectural Makino Botanical Garden
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Tanaka N
Environmental Sci. Res. Niigata Niigata Jpn
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Ishikawa Tetsuya
Riken Harima Institute
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Ishikawa Tomonori
Fujitsu Limited
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Tanaka N
The Kochi Prefectural Makino Botanical Garden
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TANAKA Nobuyuki
Optoelectronics Technology Research Laboratory
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Tanaka N
Nagoya Univ. Nagoya Jpn
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Lopez Maximo
Optoelectronics Technology Research Laboratory
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Matsuyama Isamu
Optoelectronics Technology Research Laboratory:(present Address) Semiconductor Technology Laboratori
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Lo´pez M
Optoelectronics Technology Research Laboratory
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MATSUYAMA Isamu
Optoelectronics Technology Research Laboratory
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Kawanishi Hideo
Department Of Electonic Engineering Kogakuin University
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Kawanishi H
Department Of Electronic Engineering Kohgakuin University
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KAWANISHI Hidenori
Optoelectronics Technology Research Laboratory
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SUGIMOTO Yoshimasa
Optoelectronics Technology Research Laboratory
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Sugimoto Y
Department Of Research And Development Nichia Chemical Industries Ltd
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LOPEZ Maximo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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TAMURA Masao
Optoelectronics Technology Research Laboratory
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LOPEZ Mximo
Optoelectronics Technology Research Laboratory
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NANBU Yoshihiro
Opto-Electronics Research Laboratories, NEC Corporation
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Tanaka Nobuyuki
Advanced Technology, R&D Center
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Matsuyama Isamu
Smiconductor Technology Laboratories, Oki Electric Industry Co., Ltd.
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NOMURA Yasuhiko
Optoelectronics Technology Research Laboratory
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Nanbu Yoshihiro
Opto-electronics Research Laboratories Nec Corporation
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Tamura Masao
Optoelectronic Research Laboratory:(present Address) Angstrom Technology Partnership
著作論文
- Effects of GaAs-Surface Roughness on the Electron-Beam Patterning Characteristics of a Surface-Oxide Layer
- In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
- In situ Electron-beam Processing for GaAs/AlGaAs Nano-structures
- Improvement in Patterning Characteristics of GaAs Oxide Mask Used in In Situ Electron-Beam Lithography
- In Situ GaAs Patterning and Subsequent Molecular-Beam Epitaxial Regrowth of AlGaAs/GaAs Wire Structures
- Electron Beam Patterning Mechanism of GaAs Oxide Mask Layers Used in In Situ Electron Beam Lithography
- Cathodoluminescence of Wirelike GaAs/AlAs Quantum Well Structures Grown on Substrates Patterned with [001] Mesa Stripes
- Characterization of In Situ Cl_2-Etched GaAs Buffer Layers and Regrown GaAs/AlGaAs Quantum Welts
- Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
- Photoluminescence Study of Electron-Beam-Induced Damage in GaAs/AlGaAs Quantum-Well Structures
- Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography
- Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication