Tamura Masao | Optoelectronic Research Laboratory:(present Address) Angstrom Technology Partnership

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概要

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著作論文

In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
Real-Time Observation of AlAs/GaAs Superlattice Growth by Coaxial Impact Collision Ion Scattering Spectroscopy
Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer
In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
Growth and Characterization of GaAs/GaSe/Si Heterostructures
GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy
Direct Wafer Bonding of a (001) InP-Based Strained Multiple Quantum Well on a (110) Si Substrate with a GaAs Buffer Layer, Aligning Cleavage Planes of InP and Si
In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System
Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the Reduction of Threading Dislocations in GaAs on Si

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