In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System
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概要
- 論文の詳細を見る
An ultrahigh vacuum transmission-electron microscope equipped with a molecular-beam epitaxy chamber (UHV-TEM/MBE) has been constructed in order to observe the in situ heteroepitaxial growth stages of GaAs/Si. Preliminary in situ TEM observations of the initial growth stages of single-crystalline GaAs on vicinal (100) Si (thickness, 20-50 Å) were carried out using this UHV-TEM/MBE system under optimized growth conditions. The assignment of dislocations, stacking faults and/or twins, and the relation with the critical-size of islands were examined based on moire images in individual islands (size, 40-1000 Å) for the first time.
- 社団法人応用物理学会の論文
- 1995-04-15
著者
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Yodo Tokuo
Optoelectronics Technology Research Laboratory
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Tamura Masao
Optoelectronic Research Laboratory:(present Address) Angstrom Technology Partnership
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Tomita Masahiro
Instrument Division Hitachi Ltd.
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WAZAWA Masahiro
Eiko Engineering Co., Ltd.
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Wazawa Masahiro
Eiko Engineering Co. Ltd.
関連論文
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- In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
- Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
- Growth and Characterization of GaAs/GaSe/Si Heterostructures
- GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
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- Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
- Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy
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- In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System
- Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the Reduction of Threading Dislocations in GaAs on Si
- Initial Growth of GaAs on Vicinal Si(111) Substrates by Molecular-Beam Epitaxy
- Characterization of GaAs Films Grown on Vicinal Si(110) Substrates by Molecular-Beam Epitaxy