Direct Wafer Bonding of a (001) InP-Based Strained Multiple Quantum Well on a (110) Si Substrate with a GaAs Buffer Layer, Aligning Cleavage Planes of InP and Si
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概要
- 論文の詳細を見る
We demonstrate direct wafer bonding of a (001) InP-based structure and a (110) Si substrate with a GaAs buffer layer. Cleavage planes of the InP and Si are aligned to obtain a smooth cleaved facet of the InP. Crosssectional transmission electron microscope observation shows that the InP region is dislocation-free, and that an unexpected In region is formed at the bonded interface. Strong intensity is achieved in the photoluminescence spectrum from the strained multiple quantum well in the InP region, although a peculiar feature is observed in the spectrum measured at room-temperature. The results confirm that our method of direct bonding makes it possible to achieve smooth cleaved facets and high crystalline quality in a III-V layer fabricated on a Si substrate.
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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Okuno Yae
Central Research Laboratory Hitachi Ltd.
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Tamura Masao
Optoelectronic Research Laboratory:(present Address) Angstrom Technology Partnership
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