Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer

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Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy
In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
Real-Time Observation of AlAs/GaAs Superlattice Growth by Coaxial Impact Collision Ion Scattering Spectroscopy
Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer
In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique
Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs
Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method
Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures
Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics
Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs
A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs
A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs
Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
Growth and Characterization of GaAs/GaSe/Si Heterostructures
GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
Control of Crystal Orientation of Ferroelectric SrBi_2Ta_2O_9 Thin Films with Multi-Seeding Layers
Phase Transition in Ferroelectric SrBi_2Ta_2O_9) Thin Films with Change of Heat-treatment Temperature
High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
Variation of threshold voltage in strained Si metal-oxide-semiconductor field-effect transistors induced by non-uniform strain distribution in strained-Si channels on silicon-germanium-on-insulator substrates
Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method
Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method
Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy
Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
Direct Wafer Bonding of a (001) InP-Based Strained Multiple Quantum Well on a (110) Si Substrate with a GaAs Buffer Layer, Aligning Cleavage Planes of InP and Si
In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System
Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the Reduction of Threading Dislocations in GaAs on Si

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