Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-01
著者
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ando Toshihiro
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Ando T
Okayama Prefectural Univ. Okayama Jpn
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Tamura M
Univ. Tokyo Tokyo Jpn
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Ando T
School Of Medicine. Yokohama City University
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BACHER Gerd
Technische Physik, Universitat Wurzburg
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TAMURA Munehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ANDO Toshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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Bacher Gerd
Technical Physics Wurzburg University
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Ando T
Chiba Inst. Sci. Chiba Jpn
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Tamura Munehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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