A Modified 1.5μm GaInAsP / InP Bundle-Integrated-Guide Distributed-Bragg-Reflector (BIG-DBR) Laser with an Inner Island Substrate : Waves, Optics and Quantum Electronics
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概要
- 論文の詳細を見る
A modified GaInAsP / InP BIG-DBR laser for restricting leakage current via the passive DBR region is proposed and realized by using an inner-island substrate with a quaternary blocking layer as well as employing an island-type active mesa process. As a result, superior lasing properties were attained such as a low CW threshold current of 22 mA, a high side-mode suppression ratio of 38dB, and a narrow spectral linewidth of 4.7 MHz. A wide temperature range of 87 degrees for a fixed single-mode operation was obtained.
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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Wang W.
Institute of Physics CAS.
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Lee K.s.
Department Of Physical Electronics Tokyo Institute Of Technology
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PANG M.T.
Department of Physical Electronics, Tokyo Institute of Technology
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KOMORI K
Department of Physical Electronics, Tokyo Institute of Technology
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ARAI S.
Department of Physical Electronics, Tokyo Institute of Technology
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SUEMATSU Y.
Department of Physical Electronics, Tokyo Institute of Technology
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Pang M.t.
Department Of Physical Electronics Tokyo Institute Of Technology
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Komori K
Department Of Physical Electronics Tokyo Institute Of Technology
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Suematsu Y.
Department Of Physical Electronics Tokyo Institute Of Technology
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- Preface