Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-12-15
著者
-
ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
-
TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
KIM Hyo-Chang
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
KANJO Hiroshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Kim H‐c
Seoul National Univ. Seoul Kor
-
Kanjo Hiroshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
-
Kim Hyo-chang
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Tamura Shin-ichiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
関連論文
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method