GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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Yagi Hideki
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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YAGI Hideki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SANO Takuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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MURANUSHI Kengo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yagi H
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yagi H
Konoshima Chemical Co. Ltd.
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
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Muranushi Kengo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yagi Hideki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Sano Takuya
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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Yasumoto H
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Muranushi Kengo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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