Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property (Short Note)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-03-15
著者
-
ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
-
OHIRA Kazuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Ohira Kazuya
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
-
Ohira Kazuya
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
-
Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Tamura S
Sony Corp. Yokohama Jpn
-
Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
関連論文
- HTS-rf-SQUIDを用いた低磁場NMRに関する研究
- ロボット式モバイルHTS-SQUID非破壊検査装置による水素燃料タンクの欠陥検出
- 移動する磁気微粒子検出のためのマルチチャンネルHTS-SQUIDシステムの開発
- 磁場耐性の高いHTS-SQUIDを用いたロボット式モバイル非破壊検査装置
- 超電導SQUID技術 (特集 超電導技術の最近の動向)
- 第51回応用物理学関係連合講演会(2004年)
- 有限要素法による多層磁気シールドルーム開口部の漏洩磁界に関する検討
- 磁気シールドルーム開口部の漏洩磁界に関する検討
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- 冷凍機冷却HTS-SQUIDグラジオメータを用いたロボットアーム式モバイル非破壊検査装置の開発
- 高温超伝導SQUIDを用いた磁気ガイドシステムの医療への応用
- 高温超電導SQUIDを用いたアルミ撚り線の素線断線の検出
- 高温超電導SQUIDを用いた電力用アルミ撚り線の断線非破壊検査
- 冷凍機を用いたSQUID非破壊検査システム : 振動特性と温度特性
- Angle-Resolved Inverse Photoemission Spectra of Layered 1T-VSe_2,1T-TiS_2,IT-TaS_2,2H-NbSe_2 and 2H-TaSe_2
- Photoemission Studies of Mo_6Se_8, Ru_Mo_Se_8 and Nb_Mo_Se_8
- Photoemission Studies of Electronic Structures of BaPb_Bi_xO_3
- Photoemission Spectroscopy of Electronic Structures of Cu_Mo_6S_ with Synchrotron Radiation
- Enhanced T_c and Strong Flux Pinning in Melt-Processed NdBa_2Cu_3O_y Superconductors
- Flux Pinning in Melt-Grown NdBa_2Cu_3O_y and SmBa_2Cu_3O_y Superconductors
- Magnetic and Transport Properties of Ternary Chalcogenides, BaMS_3 (M=V, Nb, Ti)
- Detection of Oxygen Deficient Regions in YBa_2 Cu_3 O_x Superconductors by Polarized Optical Microscopy
- Raman Scattering Spectra of (Sm_Ce_)_2(Ba_Sm_)_2Cu_3O_9
- 高温超伝導SQUIDを用いた水素燃料用CFRP積層アルミライナーの非破壊検査
- ロボット式モバイルHTS-SQUID非破壊検査装置
- SQUID高感度磁気センサを用いた磁性金属微粒子の検出
- 低磁場SQUID-NMRシステムの開発
- ロボットアームを用いた冷凍機冷却モバイルHTS-SQUID非破壊検査システム
- HTS SQUIDを用いた非破壊検査技術の開発--金属配管の微小欠陥の検出
- HTS SQUIDを用いた非破壊検査技術の開発 : 金属配管へのSQUID NDEの適用(SQUID,一般)
- HTS SQUIDを用いた非破壊検査技術の開発 : 金属配管へのSQUID NDEの適用
- HTS SQUID グラジオメータを用いた異種金属接合の非破壊評価
- 高温超伝導SQUIDを用いた食品内異物検査の現状と展望
- A New Homologous Series of Superconducting Cuprates with the 22(n-1)n Structure, (Hg_Tl_x)_2Ba_2Ca_Cu_nO_y (x〜0.4, n=3, 4)
- New Magnetic Phases in the R-Cu-O (R=Tm and Y) Systems
- A Missing Link is Found: a Novel Homologous Series of Superconducting Pb-Based Cuprates
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Taper-Shape Dependence of Tapered-Waveguide Traveling Wave Semiconductor Laser Amplifier (TTW-SLA)
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Feasibility Study of Silicate Phosphor CaMgSi_2O_6 : Eu^2+ Blue PDP Phosphors(Special Issue on Electronic Displays)
- Stabilization of Bluish-Green Luminescent Ce^ Centers by Rb Doping in SrS:Ce Thin Film Electroluminescent Devices : Electrical Properties of Condensed Matter
- Blue Emitting Eu^-Doped CaAl_2O_4 Phosphor Thin Films Prepared Using Pulsed Laser Deposition Technique with Post Annealing : Surfaces, Interfaces, and Films
- Blue Emitting Eu^2+ Activated Aluminate Phosphors with β-Tridymite Type Structure for PDP Application(Special Issue on Electronic Displays)
- Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
- Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property (Short Note)
- Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2 Reactive-Ion Etching
- Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
- Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Effect of Structural Disorder on the Superconductivity in Tl_2Ba_2Ca_2Cu_3O_
- Characteristics of the Spin Fluctuation in Tl_2 Ba_2 Ca_2 Cu_3 O_
- Highly Accurate Process Proximity Correction Based on Empirical Model for 0.18 μm Generation and Beyond
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Anisotropic Polarization Properties of Photoluminescence from GaInAsP/InP Quantum-Wire Structures Fabricated by Two-Step Organometallic Vapor Phase Epitaxy Growth
- Single-Mode Operation of Optically Pumped Membrane Buried Heterostructure Distributed-Feedback Lasers : Optics and Quantum Electronics
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- High $T_{0}$ Operation of 1590 nm GaInAsP/InP Quantum-Wire Distributed Feedback Lasers by Bragg Wavelength Detuning
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP distributed reflector laser with phase-shifted DFB and quantum-wire DBR sections
- Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures