Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-11-15
著者
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Nakamura M
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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YASUMOTO Hideo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yasumoto Hideo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yagi H
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yagi H
Konoshima Chemical Co. Ltd.
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
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NAKAMURA Madoka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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Yasumoto H
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Nakamura M
Toshiba Corp. Yokohama Jpn
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