Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-10-01
著者
-
Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
-
Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
-
Kudo K
Tokyo Inst. Technol. Tokyo Jpn
-
Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
-
Kudo K
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
-
Kudo Kazuki
Ntt Interdisciplinary Research Laboratories
-
Tamura M
Univ. Tokyo Tokyo Jpn
-
TAMURA Shigeo
Department of Medicine and Clinical Science, Gunma University Graduate School of Medicine
-
KUDO Koji
Department of Physical Electronics, Tokyo Institute of Technology
-
UBUKATA Akinori
Tsukuba Laboratories, Nippon Sanso Corporation
-
Kudo K
Tohoku Univ. Sendai Jpn
-
Tamura S
Sony Corp. Yokohama Jpn
-
Tamura Shigeo
Department Of Medicine And Clinical Science Gunma University Graduate School Of Medicine
-
NAGASHIMA Yasuaki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
NAGASHIMA Yasuaki
Department of Physical Electronics, Tokyo Institute of Technology
-
TAMURA Munehisa
Department of Physical Electronics, Tokyo Institute of Technology
-
UBUKATA Akinori
Department of Physical Electronics, Tokyo Institute of Technology
-
Nagashima Y
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Kudo Koji
Department Of Physical Electronics Tokyo Institute Of Technology
-
Ubukata A
Tsukuba Laboratories Nippon Sanso Corporation
-
ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Kudo Koji
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo
-
KUDO Koji
Department of Applied Chemistry, Faculty of Engineering, Kanagawa University
関連論文
- Study of Hydrogen Vacuum-Ultraviolet Light Sources for Submicron Lithography : Lithography Technology
- Study of Hydrogen Vacuum-Ultraviolet Light Sources for Submicron Lithography
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Real-Time Observation of AlAs/GaAs Superlattice Growth by Coaxial Impact Collision Ion Scattering Spectroscopy
- Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer
- In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
- Comparison of the efficacy of an oral calcitriol pulse or intravenous 22-oxacalcitriol therapies in chronic hemodialysis patients
- Extremely high levels of C-reactive protein in patients with acute lupus serositis
- Absorption Coefficient and Sensitivity of Positive and Negative Resists in the Vacuum Ultraviolet Region
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Taper-Shape Dependence of Tapered-Waveguide Traveling Wave Semiconductor Laser Amplifier (TTW-SLA)
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
- Phase Compatibility and Superconductivity of Y-Ba-Cu-O Compounds : Electrical Properties of Condensed Matter
- Superconductivity and Microstructural Observation of Er_Y_Ba_2Cu_3O_ : Electrical Properties of Condensed Matter
- Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property (Short Note)
- Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2 Reactive-Ion Etching
- Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
- Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Verification of the Model of Inductive Coupling between a Josephson Oscillator and a Stripline
- Enlargement of Kinetic Inductance of NbN Superconducting Thin Films for Device Applications
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes
- Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
- Growth and Characterization of GaAs/GaSe/Si Heterostructures
- GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
- High Speed Recording Characteristics of 3-Beam Drive : Drive Technology
- High Speed Recording Characteristics of 3-Beam Drive
- Role of E/Z Photoisomerization of Cinnamate Side Chains Attached to Polymer Backbones in the Alignment Photoregulation of Nematic Liquid Crystals
- Liquid Crystal Alignment Regulation Using Photocrosslinkable Polymers with Azide Residues
- InGaAs/InGaAsP Quantum Well Laser at 2.04 μm for Diode Spectroscopy of Carbon Dioxide Isotope : Optics and Quantum Electronics
- Growth of Ga_In_N_yAs_ Single Quantum Wells on InP(100)Substrate by Metalorganic Chemical Vapor Deposition
- Improvement of Characteristic Temperature in In_Ga_As/InGaAsP Multiple Quantum Well Laser Operating at 1.74 μm for Laser Monitor
- Hydrogen Chloride Gas Monitoring at 1.74 μm with InGaAs/InGaAsP
- Relationship between Photoreactivity and Ability to Regulate Liquid Crystal Alignment of Polymers with Cinnamate Side Chains
- High-Speed Magneto-Optic Disk Drive with Overwriting and Read-Verifying Functions : Drive Technology
- High-Speed Magneto-Optic Disk Drive with Overwriting and Read-Verifying Functions
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Nanometer Pattern Transfer by VUV Lithography with a D_2 Lamp : Lithography Technology
- Nanometer Pattern Transfer by VUV Lithography with a D_2 Lamp
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Energy-Dependent Neutron Sensitivity of Polycarbonate Recoil Track Detector
- Energy-Dependent Neutron Detection Sensitivity of Cellulose Nitrate Track Detector
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Perpendicular Magnetic Anisotropy in Co/Pd Multilayered Films Prepared by Electroplating
- Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate