ARAI Shigehisa | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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概要
- Arai Shigehisaの詳細を見る
- 同名の論文著者
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technologyの論文著者
関連著者
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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ITAYA Yoshio
Department of Physical Electronics, Tokyo Institute of Technology
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Itaya Yoshio
Department Of Physical Electronics Tokyo Institute Of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Ravikumar K.g.
Department Of Physical Electronics Tokyo Institute Of Technology
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Ravikumar K.g.
The Advanced Tech. R&d Center Fujikura Ltd.
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KISHINO Katsumi
Department of Engineering and Applied Sciences, Sophia University
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Kishino Katsumi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
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Asada Masahiro
Department Of Physical Electronics Tokyo Institute Of Technology
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KISHINO Katsumi
Department of Physical Electronics, Tokyo Institute of Technology
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雨宮 智宏
東京大学先端科学技術研究センター
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雨宮 智宏
東京工業大学 量子ナノエレクトロニクス研究センター
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KUDO Koji
Department of Physical Electronics, Tokyo Institute of Technology
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Kudo Koji
Department Of Physical Electronics Tokyo Institute Of Technology
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Amemiya Tomohiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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SHIRAO Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kudo Koji
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo
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KUDO Koji
Department of Applied Chemistry, Faculty of Engineering, Kanagawa University
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Ravikumar K.
Department Of Physical Electronics Tokyo Institute Of Technology
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WATANABE Masahiro
Department of Information Processing, Tokyo Institute of Technology
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IZUMI Akira
Japan Advanced Institute of Science and Technology (JAIST)
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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KIKUGAWA Tomoyuki
Anritsu Co.
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SHIMOMURA Kazuhiko
Department of Physical Electronics, Tokyo Institute of Technology
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IZUMI Akira
Department of Physical Electronics, Tokyo Institute of Technology
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OHKI Yoshimasa
Department of Physical Electronics, Tokyo Institute of Technology
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Katayama Shinya
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)nippon Sheet Glass
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OHKI Yoshio
NTT Advanced Technology Corporation
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Ohki Y
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Izumi A
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Izumi Akira
Department Of Anatomy Iwate Medical University School Of Medicine
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Shimomura K
Department Of Electrical And Electronic Engineering Sophia University
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Shimomura Kazuhiko
Department Of Electrical And Electronic Engineering Sophia Universiry
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Takizawa Toshiyuki
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Watanabe Masahiro
Department Of Anatomy Hokkaido University School Of Medicine
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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Sato Takashi
Department Of Applied Biochemistry And Food Science Saga University
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Okumura Tadashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ito Hitomi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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TAKINO Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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ARAI Shigehisa
Department of Physical Electronics, Tokyo Institute of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Park S
Dongguk Univ. Seoul Kor
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HIRAYAMA Hideki
Department of Physical Electronics, Tokyo Institute of Technology
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KAWANISHI HIDEO
Department of Internal Medicine, Miki City Hospital
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Choi In-hoon
Department Of Materials Science Korea University
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Lee Keun-sam
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Kudo K
Tokyo Inst. Technol. Tokyo Jpn
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Arai Shigehisa
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Tohmori Yuichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kudo K
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Kudo Kazuki
Ntt Interdisciplinary Research Laboratories
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Jiang Xiao
Department Of Physical Electronics Tokyo Institute Of Technology
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Jiang Xiao
Department Of Neurosurgery Tokyo Medical And Dental University
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Komori K
Faculty Of Engineering Tokyo Institute Of Technology
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Tamura M
Univ. Tokyo Tokyo Jpn
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TAMURA Shigeo
Department of Medicine and Clinical Science, Gunma University Graduate School of Medicine
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Hirayama Hideki
Department Of Physical Electronics Tokyo Institute Of Technology
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KOMORI Kazuhiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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PANG Mu-Ting
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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CAO Ming
Department of Physical Electronics, Tokyo Institute of Technology
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SHINGAI Yasushi
Department of Physical Electronics, Tokyo Institute of Technology
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STUBKJAER Kristian
Department of Physical Electronics, Tokyo Institute of Technology
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ADAMS Alfred
Department of Physical Electronics, Tokyo Institute of Technology
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KATAYAMA Shinya
Department of Physical Electronics, Tokyo Institute of Technology
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PARK Seoung
Department of Physics, Hyosung Women's University
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MIYAKE Yasunari
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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UBUKATA Akinori
Tsukuba Laboratories, Nippon Sanso Corporation
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Miyake Yasunari
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyake Yasunari
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Park Seoung
Department Of Internal Medicine Chonbuk National University Medical School:airway Remodeling Laborat
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Kawanishi Hideo
Department Of Physical Electronics Tokyo Institute Of Technology
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Adams Alfred
Department Of Physical Electronics Tokyo Institute Of Technology
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Stubkjaer Kristian
Department Of Physical Electronics Tokyo Institute Of Technology
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Park S.
Department Of Physics Dongguk University
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Kudo K
Tohoku Univ. Sendai Jpn
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Tamura S
Sony Corp. Yokohama Jpn
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Cao Ming
Department Of Physical Electronics Tokyo Institute Of Technology
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Oda Manabu
Department Of Geriatric Pharmacology And Therapeutics Graduate School Of Pharmaceutical Sciences Chi
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Pang Mu-ting
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology:harbin Shipb
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Choi In-hoon
Department Of Material Science Korea University
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Choi In-hoon
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology:korea Univer
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Tamura Shigeo
Department Of Medicine And Clinical Science Gunma University Graduate School Of Medicine
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NAGASHIMA Yasuaki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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NAGASHIMA Yasuaki
Department of Physical Electronics, Tokyo Institute of Technology
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TAMURA Munehisa
Department of Physical Electronics, Tokyo Institute of Technology
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UBUKATA Akinori
Department of Physical Electronics, Tokyo Institute of Technology
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MUGURUMA Hitoshi
Department of Electronic Engineering, Shibaura Institute of Technology
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MURATAKE Shigeki
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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FUJIMOTO Hiromasa
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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SAKAMORI Shigenori
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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Nagashima Y
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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KIKUNO Eijiro
Department of Physical Electronics, Tokyo Institute of Technology
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AMIOTTI Marco
Department of Physical Electronics, Tokyo Institute of Technology
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TAKIZAWA Toshiyuki
Department of Physical Electronics, Tokyo Institute of Technology
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Kikuno Eijiro
Department Of Physical Electronics Tokyo Institute Of Technology
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Amiotti Marco
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Sakamori Shigenori
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Ubukata A
Tsukuba Laboratories Nippon Sanso Corporation
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Tanbun-Ek Tawee
Department of Physical Electronics, Tokyo Institute of Technology
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Fujimoto Hiromasa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Takizawa Toshiyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Muratake Shigeki
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Suemasu Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kawanishi Hideo
Department Of Cardiology Himeji Cardiovascular Center
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Tanbun-ek Tawee
Department Of Physical Electronics Tokyo Institute Of Technology
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Muguruma Hitoshi
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Koyama Fumio
Department Of Physical Electronics Tokyo Institute Of Technology
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Kondo Daisuke
Department Of Chemical Reaction Engineering Nagoya City University
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NAKAHARA Masafumi
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Sato Noriaki
Department Of Electronics Faculty Of Engineering Nagoya University
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Shingai Yasushi
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Suemasu Takeshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Komori Kazuhiro
Department Of Pediatrics Nagasaki Hospital Agency Kamigoto Hospital
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Nakahara Masafumi
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Numajiri Yuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Lee SeungHun
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Amemiya Tomohiro
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Takino Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Shirao Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kang JoonHyun
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Atsumi Yuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Yokoyama Ryo
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kondo Daisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Arai Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Koguchi Takayuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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RAVIKUMAR K.G.
Department of Physical Electronics, Tokyo Institute of Technology
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Oda Manabu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Asada Masahiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Osabe Ryo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kondo Simon
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Sato Noriaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yukinari Masashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
著作論文
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions