Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
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概要
- 論文の詳細を見る
Low-loss amorphous-silicon (a-Si) waveguides comprising three vertically stacked layers prepared on silicon-on-insulator substrates are demonstrated. We have fabricated multilayer a-Si waveguides and investigated their loss characteristics; this is the first such investigation to our knowledge. All the process temperatures were regulated below 400 °C for the complementary metal oxide semiconductor (CMOS) backend process compatibility. When the surface roughness and sidewall roughness were decreased, the propagation loss decreased to 3.7 dB/cm even in the case of the third layer a-Si waveguide. Such low-loss waveguides can be effectively applied to realize multilayer stacked optical devices.
- 2011-12-25
著者
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雨宮 智宏
東京大学先端科学技術研究センター
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雨宮 智宏
東京工業大学 量子ナノエレクトロニクス研究センター
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Oda Manabu
Department Of Geriatric Pharmacology And Therapeutics Graduate School Of Pharmaceutical Sciences Chi
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Amemiya Tomohiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kang JoonHyun
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Atsumi Yuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Oda Manabu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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