10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes
スポンサーリンク
概要
著者
-
Lee Jieun
Department Of Chemical Engineering Sungkyunkwan University
-
Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
-
Amemiya Tomohiro
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Koguchi Takayuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Shindo Takahiko
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Futami Mitsuaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
-
Doi Kyouhei
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
-
Yamahara Yoshiyuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
関連論文
- Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes
- Effect of Supplementation of Vitamin E and Vitamin C on Brain Acetylcholinesterase Activity and Neurotransmitter Levels in Rats Treated with Scopolamine, an Inducer of Dementia
- Low Threshold Current DR Laser with Wirelike Active Regions and Integration of EAM with High Electrical Isolation
- Degradation of Acetone and MEK Using a Biofilter Packed with a Ceramic-type Medium
- Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions
- Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
- Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells
- Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits
- GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect
- 85 °C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer
- Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures
- High $T_{0}$ Operation of 1590 nm GaInAsP/InP Quantum-Wire Distributed Feedback Lasers by Bragg Wavelength Detuning
- Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions
- Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm
- Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure
- 10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes
- GaInAsP/InP distributed reflector laser with phase-shifted DFB and quantum-wire DBR sections
- Direct Wafer Bonding of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Substrate
- Theoretical analysis of the damping effect on a transistor laser
- Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions