High $T_{0}$ Operation of 1590 nm GaInAsP/InP Quantum-Wire Distributed Feedback Lasers by Bragg Wavelength Detuning
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概要
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1590 nm GaInAsP/InP quantum-wire distributed feedback lasers incorporating Bragg wavelength detuning from the gain peak wavelength of active regions were fabricated by electron beam lithography, CH4/H2 reactive ion etching, and organometallic vapor-phase-epitaxy regrowth. A stable single-mode operation was obtained over a wide temperature range for devices with a detuning amount of about 30–40 nm. In particular, a submode suppression ratio of 42 dB was achieved at 1.2 times the threshold. The characteristic temperature for the threshold current density of 95 K and that for the differential quantum efficiency of 243 K were obtained over a 20 to 80 °C temperature range.
- Japan Society of Applied Physicsの論文
- 2007-05-25
著者
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Yagi Hideki
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Ohira Kazuya
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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PLUMWONGROT Dhanorm
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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Maruyama Takeo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Miura Koji
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nishimoto Yoshifumi
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nishimoto Yoshifumi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Arai Shigehisa
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Plumwongrot Dhanorm
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
-
Yagi Hideki
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Ohira Kazuya
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Maruyama Takeo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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