GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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Yagi Hideki
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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YAGI Hideki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SANO Takuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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OHIRA Kazuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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PLUMWONGROT Dhanorm
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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MARUYAMA Takeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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HAQUE Anisul
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ohira Kazuya
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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