Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures

概要

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The polarization properties of GaInAsP/InP single-quantum-well (SQW) quantum-wire (Q-Wire) structures fabricated by electron beam lithography, CH4/H2 reactive ion etching, and organometallic vapor-phase epitaxial regrowth have been investigated. Spontaneous emission spectra of the electrical field perpendicular and parallel to the Q-Wire direction $\langle 01\bar{1}\rangle$ were measured and the polarization anisotropic properties in lattice-matched (LM) and strain-compensated (SC) SQW Q-Wire structures were compared. Even for a relatively wide wire around 35 nm, the polarization degrees in the SC-SQW Q-Wires were clearly observed to be three-times-stronger than in the LM-SQW Q-Wires. Furthermore, the wire-width dependences of the polarization degree in the LM- and SC-SQW Q-Wire structures were measured and compared with theoretical calculations. It was found that the theoretical prediction accurately fitted in the case of the LM-SQW Q-Wires, whereas the measured results showed approximately two-times-stronger polarization anisotropy than the prediction of the SC-SQW Q-Wires, which might be attributed to the energy band deformation and the effective wire-width becoming narrower than the wire-width measured from a scanning electron microscope (SEM) image.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-05-25