GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect
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概要
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By using lateral quantum confinement effect, a sub mA threshold current operation of a long wavelength GaInAsP/InP distributed-reflector (DR) laser, consisting of wide and narrow wirelike active regions, was demonstrated for the first time under room-temperature continuous-wave (RT-CW) condition. Eye-patterns have been studied for back-to-back as well as 10-km optical fiber transmission line. Even though devices had broad contact electrodes, clear eye opening was observed up to 2 Gbps pseudo random bit sequence (PRBS; $2^{31} - 1$) data. A monolithic integration of a power monitor (PM) at the front side of the DR laser was also demonstrated for the first time. Almost linear photocurrent characteristic with very high isolation resistance of 60 M$\Omega$ was obtained by separating the PM section by a narrow (500 nm) and deep groove filled with benzocyclobutene (BCB).
- 2008-06-25
著者
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Ullah Saeed
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Suemitsu Ryo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Lee Seung
Quantum-functional Semiconductor Research Center Dongguk University
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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