Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm
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概要
- 論文の詳細を見る
A sub-mA-threshold-current operation (as low as 0.8 mA) of a high-mesa stripe geometry distributed reflector (DR) laser with a wirelike active distributed feedback (DFB) section and passive distributed Bragg reflector (DBR) section was realized under room-temperature continuous-wave conditions utilizing a narrow laser stripe (2.1 μm) and a large index coupling coefficient of 570 cm-1.
- Japan Society of Applied Physicsの論文
- 2007-11-25
著者
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Ullah Saeed
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Otake Masato
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Suemitsu Ryo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Lee SeungHun
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Ullah Saeed
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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