Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
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概要
- 論文の詳細を見る
Surface activated bonding (SAB) technology was investigated to realize InP-based active photonic devices on a silicon-on-insulator (SOI) substrate for highly compact photonic integrated circuits (PICs). A wide area five-quantum-wells (5QWs) GaInAsP/InP membrane structure was successfully bonded onto an SOI waveguide using a low-temperature (150 °C) N<sub>2</sub> plasma SAB method. The full width at half maximum (FWHM) of the photoluminescence (PL) of the 5QWs membrane structure on SOI was comparable to that of conventional QWs. It was revealed that the PL intensity distribution and peak wavelength shift of the GaInAsP 5QWs structure around the Si waveguides were small.
- 2011-08-25
著者
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Osabe Ryo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kondo Simon
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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