Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
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概要
- 論文の詳細を見る
A novel structure, 1.5-1.6 μm GaInAsP/InP bundle integrated guide (BIG) distributed Bragg reflector (DBR) laser is presented. The device was operated under CW condition at room temperature with low threshold current. Stable single mode operation was obtained at up to twice the threshold current. The significance of this structure is that the step at the joint between two waveguide regions, such as the active and passive DBR regions, is negligible which results in easy fabrication of buried heterostructure. Theoretical high coupling efficiency of 95-99% with largr fabrication tolerance and higher optical confinement in the active layer is possible.
- 社団法人応用物理学会の論文
- 1985-06-20
著者
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Tohmori Yuichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Jiang Xiao
Department Of Physical Electronics Tokyo Institute Of Technology
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Jiang Xiao
Department Of Neurosurgery Tokyo Medical And Dental University
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Koyama Fumio
Department Of Physical Electronics Tokyo Institute Of Technology
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
関連論文
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