Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-12-15
著者
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Raj Mothi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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WIEDMANN Jorg
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SAKA Yoshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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EBIHARA Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Wiedmann Jorg
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ebihara Koji
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ebihara K
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Saka Yoshikazu
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
関連論文
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Taper-Shape Dependence of Tapered-Waveguide Traveling Wave Semiconductor Laser Amplifier (TTW-SLA)
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
- Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property (Short Note)
- Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2 Reactive-Ion Etching
- Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
- Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Polysilane-Based Polymer Diodes Emitting Ultraviolet Light
- Fast Electron Beam Lithography System with 1024 Beams Individually Controlled by Blanking Aperture Array
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Anisotropic Polarization Properties of Photoluminescence from GaInAsP/InP Quantum-Wire Structures Fabricated by Two-Step Organometallic Vapor Phase Epitaxy Growth
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- Single-Mode Operation of Optically Pumped Membrane Buried Heterostructure Distributed-Feedback Lasers : Optics and Quantum Electronics
- A Modified 1.5μm GaInAsP / InP Bundle-Integrated-Guide Distributed-Bragg-Reflector (BIG-DBR) Laser with an Inner Island Substrate : Waves, Optics and Quantum Electronics
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures