[Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers

概要

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We report the structural properties and losing characteristics of GaInAsP/InP multiple-quantum-wire lasers fabricated by electron beam lithography, CH_4/H_2-reactive ion etching and 2-step organometallic vapor-phase-epitaxial growth processes. Good size uniformity of multiple-quantum-wire structures (wire widths of 18 nm and 27 nm in a period of 80 nm) was obtained with standard deviations of less than ±2 nm. We experimentally demonstrated that low-damage etched/regrown interfaces of quantum-wire structures can be realized by using a partially strain-compensated quantum-well structure. Lasing properties of 5-quantum-well wirelike lasers (wire width of 43 nm in a period of 100 nm) superior to those of quantum-film lasers prepared on the same initial wafer due to a volume effect were found at temperatures up to 85℃. Finally, room temperature (RT)-continuous wave (CW) operation of multiple-quantum-wire lasers (wire width of 23 nm in a period of 80 nm, 5-stacked quantum-wires) was achieved, and the good reliable operation of this quantum-wire laser was shown for the first time in lifetime measurement under the RT-CW condition.
社団法人電子情報通信学会の論文
2003-12-13