Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF_2/Si(111)
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概要
- 論文の詳細を見る
Electroluminescence (EL) from a single-crystal CaF_2 layer including nanocrystal Si formed on Si(111) substrate has been demonstrated. For the sample grown by the coevaporation of Si and CaF_2 with a flux ratio of Si:CaF_2=1:3-1:4, visible electro-luminescence was clearly observed at room temperature with pulsed bias of approximately 10 V. A typical EL spectrum had a 580 nm peak wavelength and 280 nm the full width at half maximum (FWHM). EL can be observed from the sample with appropriate size and density of nanocrystal Si embedded in single-crystal CaF_2.
- 社団法人応用物理学会の論文
- 1998-05-15
著者
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MARUYAMA Takeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Maruyama T
Tokyo Inst. Technol. Yokohama Jpn
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Maruyama T
Meijo Univ. Nagoya Jpn
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Maruyama T
Department Of Photonics Ritsumeikan University
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Maeda Y
Center For Microelectronic Systems Kyushu Institute Of Technology
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Matsunuma Takeshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maeda Yasuhisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maeda Yukio
Department Of Applied Physics Tokyo University Of Agriculture And Technology
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Maruyama Takeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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