Negative Differential Resistance of CaF_2/CdF_2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
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概要
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Room-temperature negative differential resistance (NDR) of triple-barrier cadmium di-fluoride (CdF_2)/calcium di-fluoride (CaF_2) heterostructure resonant-tunneling diode (RTD) on a Si(111) substrate has been demonstrated. CdF_2/CaF_2 multilayered heterostructures were grown on a Si(111) substrate using partially ionized beam epitaxy to obtain atomically flat interfaces. The RTD structures, which consist of triple CaF_2 energy barriers and double CdF_2 quantum wells, were fabricated by electron beam (EB) lithography and dry etching to avoid thermal and chemical damage to the CdF_2 layers. In the current-voltage characteristics of the RTD, NDR was clearly observed even at room temperature and the maximum peak-to-valley (P/V) ratio was about 6.
- 社団法人応用物理学会の論文
- 1999-02-01
著者
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Saito Wataru
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Saito Wataru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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AOKI Yuichi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TSUGANEZAWA Mika
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Aoki Yuichi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tsuganezawa Mika
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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