Influence of Boron in Semi-insulating GaAs Crystals on Their Electrical Activation by Si-Ion Implantation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-05-15
著者
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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OTOKI Yoohei
Advanced Research Center, Hitachi Cable, Ltd.
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WATANABE Masatoshi
Advanced Research Center, Hitachi Cable, Ltd.
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KUMA Shoji
Advanced Research Center, Hitachi Cable, Ltd.
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OKUBO Seiichi
Takasago Branch, Hitaka Works, Hitachi Cable, Ltd.
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Kuma S
Advanced Research Center Hitachi Cable Ltd.
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Kuma Shoji
Advanced Research Center Hitachi Cable Ltd.
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Otoki Yoohei
Advanced Research Center Hitachi Cable Ltd.
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Okubo Seiichi
Takasago Branch Hitaka Works Hitachi Cable Ltd.
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