Deflection of a Velocity Compressed Yb Atomic Beam by a Multi-Mode Spectral Laser
スポンサーリンク
概要
- 論文の詳細を見る
We have generated a continuous, monovelocity Yb atomic beam based on a technique combining velocity compression and beam deflection. Two single-mode lasers were used to compress the thermally broadened velocity distribution, and a multi-mode spectrum of a mode-locked laser was used to extract the compressed part as a deflected beam. The observed deflection angles were compared with the calculations. Deflection angles up to 12° were obtained.
- 社団法人応用物理学会の論文
- 1997-12-15
著者
-
URABE Shinji
Graduate School of Engineering Science, Osaka University
-
Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
-
Urabe S
Osaka Univ. Osaka Jpn
-
Urabe Shinji
Department Of Physical Science Osaka University
-
Tanaka Utako
Kansai Advanced Research Center Communications Research Laboratory
-
Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
-
WATANABE Masayoshi
Kansai Advanced Research Center, National Institute of Information and Communications Technology
-
IMAJO Hidetsuka
Kansai Advanced Research Center, Communications Research Laboratory
-
URABE Shinji
Kansai Advanced Research Center, Communications Research Laboratory
-
HAYASAKA Kazuhiro
Kansai Advanced Research Center, Communications Research Laboratory
-
Imajo Hidetsuka
Kansai Advanced Research Center Communications Research Laboratory
-
OHMUKAI Ryuzo
Kansai Advanced Research Center, Communications Research Laboratory
-
Ohmukai Ryuzo
Kansai Advanced Research Center Communications Research Laboratory
-
Hayasaka Kazuhiro
Kansai Advanced Research Center Communications Research Laboratory
-
Watanabe Masayoshi
Kansai Advanced Research Center Communications Research Laboratory
関連論文
- Optimization of Doppler Cooling of a Single ^Ca^+ Ion
- Si基板上弗化物系サブバンド間遷移レーザの理論解析
- Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
- Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
- ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
- Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
- ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
- Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
- ローカルエピタキシー法によるCoSi_2/CaF_2三重障壁共鳴トンネルダイオードの微分負性抵抗特性(量子効果デバイス及び関連技術)
- ローカルエピタキシー法によるCoSi_2/CaF_2三重障壁共鳴トンネルダイオードの微分負性抵抗特性(量子効果デバイス及び関連技術)
- Si(100)基板上に形成されたCdF_2/CaF_2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性(量子効果デバイス及び関連技術)
- Si(100)基板上に形成されたCdF_2/CaF_2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性(量子効果デバイス及び関連技術)
- ローカルエピタキシー法により形成されたシリコン基板上CdF_2/CaF_2共鳴トンネルダイオード微分負性抵抗特性の構造依存性
- ローカルエピタキシー法により形成されたシリコン基板上CdF_2/CaF_2共鳴トンネルダイオード微分負性抵抗特性の構造依存性
- Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
- ナノ領域成長によるSi(111)及びSi(100)基板上CdF_2/CaF_2共鳴トンネルダイオード
- ナノ領域成長によるSi(111)及びSi(100)基板上CdF_2/CaF_2共鳴トンネルダイオード
- Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
- Epitaxial Growth and Electrical Characteristics of CaF_2/Si/CaF_2 Resonant Tunneling Diode Structures Grown on Si(111)1°-off Substrate
- エピタキシャルCaF_2を用いたMIS電子トンネルエミッタのエミッション電流安定化およびta-Cによる電子放出閾価電圧の低下
- Si-CaF_2及びCdF_2-CaF_2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード
- Si-CaF_2及びCdF_2-CaF_2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード
- Si基板上Si/CdF_2量子井戸構造を用いた電界効果型量子効果デバイス
- Si基板上Si/CdF_2量子井戸構造を用いた電界効果型量子効果デバイス
- Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
- Direct Measurement of Sheath Electric Field Distribution in Front of Substrate in Electron Cyclotron Resonance Plasma by Laser-Induced Fluorescence Technique
- Two-Dimensional Measurement of He Metastable Atom Density Profile in Front of Substrate in Electron Cyclotron Resonance Plasma Flow by Laser-Induced Fluorescence Spectroscopy
- Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Characteristics of Cavity Round-Trip Time Pulses in Short-Cavity Q-Switched AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method
- Electrical Insulation Properties of Carbon-Corntrolled Semi-Insulating GaAs
- Influence of Boron in Semi-insulating GaAs Crystals on Their Electrical Activation by Si-Ion Implantation
- Degradation of Activation on Si-Implanted GaAs Crystal Wafers by Mechanical Surface Damages
- A Radio Frequency Driven DC Electron Beam Source
- Ferrite Core Effects in a 13.56 MHz Inductively Coupled Plasma
- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
- Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
- Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Planar Defect Modes Excited at the Band Edge of Three-dimensional Photonic Crystals(Electromagnetism, Optics, Acoustics, Heat Transfer, Classical Mechanics and Fluid Mechanics)
- Terahertz-Photomixing Efficiency of a Photoconductive Antenna Embedded in a Three-Dimensional Photonic Crystal
- A Compact 209-nm Deep UV cw Light Source for Spectroscopy Using Frequency Doubling of a Diode Laser
- Motional Resonances of Sympathetically Cooled ^Ca^+, Zn^+, or Ga^+ Ions in a Linear Paul Trap : Atoms, Molecules, and Chemical Physics
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Control of Oxygen-Atom Transport in Silicon Melt during Crystal Growth by Electromagnetic Force
- Three-Dimensional Simulation of Silicon Melt Flow in Electromagnetic Czochralski Crystal Growth
- Microwave Dielectric Properties of Sm_2Ba(Cu_Zn_x)O_5(x = 0 to 1) Solid Solutions
- Microwave Dielectric Properties of Y_2Ba(Cu_Zn_x)O_5 Solid Solutions
- Phototransistors Using Point Contact Structures
- Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF_2 on Si(111)Substrate Prepared by Rapid Thermal Annealing
- Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF_2 Epilayers on Si(111) with Rapid Thermal Anneal
- Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2/Si(111) with Rapid Thermal Anneal
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Terahertz Wave Generations from Multi-Quantum Well with Transverse Electric Field
- Development of a Tunable 209 nm Continuous-Wave Light Source Using Two-Stage Frequency Doubling of a Ti : Sapphire Laser(Optics and Quantum Electronics)
- Ultrafast Coherent Control of Excitons Using Pulse-Shaping Technique
- Manipulation of Coherent Exciton towards Novel Ultrafast Devices
- Submilliwatt Continuous-Wave Coherent Light Generation near 214.5 nm by Two-Stage Frequency Doubling of a Diode Laser
- Saturation Spectroscopy of Potassium for Frequency Stabilization of Violet Diode Lasers
- Spatial Distribution of He Metastable Atoms in Electron Cyclotron Resonance Plasma
- Motional Resonances of Sympathetically Cooled 44Ca+, Zn+, or Ga+ Ions in a Linear Paul Trap
- Trapping of Ca^+ Ions and Optical Detection
- Saturation Spectroscopy of Potassium for Frequency Stabilization of Violet Diode Lasers
- Terahertz-Photomixing Efficiency of a Photoconductive Antenna Embedded in a Three-Dimensional Photonic Crystal
- Laser Cooling of Ca^+ with an External-Cavity Ultraviolet Diode Laser
- Deflection of a Velocity Compressed Yb Atomic Beam by a Multi-Mode Spectral Laser
- Sum-Frequency Generation near 194 nm with an External Cavity by Simultaneous Enhancement of Frequency-Stabilized Fundamental Lasers
- Tunable 397 nm Light Source for Laser Cooling of Ca Ions Based on Frequency Doubling of Diode Laser
- Laser Cooling of Ca^+ Ions and Observation of Collision Effects
- Doppler-Free Optogalvanic Spectroscopy of Ca^+ and Ca
- Measurement of Electrical Characteristics of Stored Be^+ Ions in a Penning Trap
- Magnetic Anisotropy and Magneto-Optical Properties of Iron Oxide Films
- Epitaxial Growth and Ultraviolet Photoluminescence of CaF_2/ZnO/CaF_2 Heterostructures on Si(111)
- Optimization Method of Memory Characteristics in Antiferroelectric Liquid Crystals
- CaF_2/CdF_2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
- Si(111)上CdF_2-CaF_2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性
- ED2000-56 / SDM2000-56 Si(111)上CdF_2-CaF_2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性
- Negative Differential Resistance of CaF_2/CdF_2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
- Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method
- Modification of Heat and Mass Transfers and Their Effect on the Crystal-Melt Interface Shape of Si Single Crystal during Czochralski Crystal Growth
- A Novel Technique for Optical Generation of Millimeter-Wave Signals Using Multiple Phase-Locked Lasers(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
- A Compact 209-nm Deep UV cw Light Source for Spectroscopy Using Frequency Doubling of a Diode Laser
- Stabilization of a 729 nm Laser Diode for High-Resolution Spectroscopy of Calcium Ions