Epitaxial Growth and Ultraviolet Photoluminescence of CaF_2/ZnO/CaF_2 Heterostructures on Si(111)
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概要
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The epitaxial growth of zinc oxide(ZnO)nanocrystals embedded in a single-crystalline CaF_2 layer on a Si(111)substrate has been demonstrated. Highly c-axis-oriented ZnO 4-10nm thick was grown on a CaF_2(111)layer using radio-frequency(RF)sputtering followed by annealing in ultrahigh vacuum, resulting in the formation of epitaxial self-organized ZnO nanocrystals on CaF_2/Si(111). It was found that CaF_2 can be grown epitaxially over ZnO/CaF_2 by molecular beam epitaxy(MBE), thus the CaF_2/ZnO/CaF_2 heterostructure has been formed on a Si(111)substrate. Abrupt heterointerfaces between CaF_2 and ZnO were confirmed on a transmission electron microscope(TEM)cross section, and ultraviolet(UV)photoluminescence(PL)corresponding to the band-gap energy of ZnO was dominant in PL spectra observed at room temperature.
- 社団法人応用物理学会の論文
- 2000-06-01
著者
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渡辺 正裕
東京工業大学大学院総合理工学研究科
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Watanabe M
Nec Corp. Ibaraki Jpn
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Maeda Yasuhisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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OKANO Shun-ichi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Okano Shun-ichi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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