渡辺 正裕 | 東京工業大学大学院総合理工学研究科
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関連著者
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渡辺 正裕
東京工業大学大学院総合理工学研究科
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Watanabe M
Nec Corp. Ibaraki Jpn
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浅田 雅洋
東京工業大学大学院総合理工学研究科
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浅田 雅洋
東京工業大学大学院 総合理工学研究科
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渡辺 正裕
東京工業大学大学院総合理工学研究科:独立行政法人科学技術振興機構SORST
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金澤 徹
東工大総理工
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自念 圭輔
東京工業大学大学院総合理工学研究科
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金澤 徹
東京工業大学
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Komori K
Faculty Of Engineering Tokyo Institute Of Technology
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Asada Masahiro
The Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Te
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WATANABE Masanobu
National Institute of Advanced Industrial Science and Technology
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内田 薫
東京工業大学大学院総合理工学研究科
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小平 新志
東京工業大学大学院総合理工学研究科
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Wang X‐l
National Institute Of Advanced Industrial Science And Technology (aist)
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Wang Xue-lun
Division Of Electron Devices Electrotechnical Laboratory
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Wang Xue-lun
National Institute Of Advanced Industrial Science And Technology (aist)
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Komori Kazuhiro
National Institute Of Advanced Industrial Science And Technology (aist)
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HIDAKA Takehiko
Shonan Institute of Technology
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OGURA Mutsuo
National Institute of Advanced Industrial Science and Technology
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Ogura M
Jst‐crest Ibaraki Jpn
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Ogura Mutsuo
National Institute Of Advanced Industrial Science And Technology (aist)
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Ogura Masahiko
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Hidaka T
Electrotechnical Laboratory
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Wang Xue-Lun
National Institute of Advanced Industrial Science and Technology
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齋藤 渉
東京工業大学工学部電気電子工学科
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斎藤 渉
東京工業大学工学部電気・電子工学科
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松田 克己
東京工業大学大学院総合理工学研究科
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MARUYAMA Takeo
Department of Information Processing, Tokyo Institute of Technology
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NAKAMURA Naoto
Department of Information Processing, Tokyo Institute of Technology
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WATANABE Masahiro
Department of Information Processing, Tokyo Institute of Technology
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筒井 将史
東京工業大学 工学部 電気電子工学科
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Nakamura Nobuo
Central Research Laboratory Hitachi Ltd.
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Maruyama T
Tokyo Inst. Technol. Yokohama Jpn
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Maruyama T
Faculty Of Engineering Niigata University
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Maruyama Takeo
Department Of Human Sciences Mukogawa Women's University
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Nakamura N
Tokyo Inst. Technol. Yokohama Jpn
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Nakamura Naoto
Department Of Endocrinology And Metabolism Kyoto Prefectural University Of Medicine Graduate School
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Maruyama T
Meijo Univ. Nagoya Jpn
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Maruyama T
Department Of Photonics Ritsumeikan University
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Nakamura Noboru
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Maruyama Takeo
Faculty Of Engineering Niigata University
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Nakamura Nobuhiro
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Nakamura N
Department Of Information Processing Tokyo Institute Of Technology
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Morohashi Isao
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Maruyama Takeo
Department Of Electrical And Electronic Engineering Faculty Of Engineering Niigata University
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Watanabe Masahiro
Department Of Anatomy Hokkaido University School Of Medicine
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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URABE Shinji
Graduate School of Engineering Science, Osaka University
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Urabe S
Osaka Univ. Osaka Jpn
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Urabe Shinji
Department Of Physical Science Osaka University
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MOROHASHI Isao
Shonan Institute of Technology
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WATANABE Masayoshi
Kansai Advanced Research Center, National Institute of Information and Communications Technology
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齋藤 渉
東京工業大学 工学部 電気電子工学科
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MOROHASHI Isao
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology
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Watanabe Masayoshi
Kansai Advanced Research Center Communications Research Laboratory
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青木 雄一
東京工業大学 量子効果エレクトロニクス研究センター
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藤井 諒
東工大総理工
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山崎 克之
東京工業大学 工学部 電気電子工学科
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OKADA Tatsuya
Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima
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TOYODA Kenji
Graduate School of Engineering Science, Osaka University
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諸澤 篤史
東工大総理工
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和田 宇史
東工大総理工
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渡辺 正裕
東工大総理工
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浅田 雅洋
東工大総理工
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菊池 毅
東京工業大学大学院総合理工学研究科
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田村 信平
東京工業大学大学院総合理工学研究科
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藤岡 裕智
東京工業大学大学院総合理工学研究科
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石川 達也
東京工業大学 大学院総合理工学研究科 物理情報システム創造専攻
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HIBIYA Taketoshi
Fundamental Research Laboratories, NEC Corporation
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末益 崇
東京工業大学 工学部:筑波大学物質工学系
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KOMORI Kazuhiro
Electrotechnical Laboratory (ETL), AIST, MITI
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SUGAYA Takeyoshi
Electrotechnical Laboratory (ETL)
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Wang W
National Laboratory Of Solid State Microstructure And Department Of Physics Nanjing University
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Deveaud B
Swiss Federal Inst. Technol.‐lausanne Lausanne‐epfl Che
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森 郁
東京工大 工
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Toyoda Kenji
Graduate School Of Engineering Science Osaka University
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Urabe Shinji
Graduate School Of Engineering Science Osaka University
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Okada T
Department Of Mechanical Engineering Faculty Of Engineering The University Of Tokushima
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WATANABE Masanobu
Electrotechnical Laboratory, Optical Information Section
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西山 淳
東京工業大学 量子効果エレクトロニクス研究センター
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石川 達也
東京工業大学大学院総合理工学研究科物理情報システム創造専攻
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Okada Tatsuya
Department Of Mechanical Engineering Tokushima University
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森 郁
東京工業大学工学部
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河野 義史
東京工業大学工学部
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Hayes Gary
Physics Department. Imo Swiss Federal Institute Of Technology Lausanne
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DEVEAUD Benoit
Physics Department., IMO, Swiss Federal Institute of Technology Lausanne
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酒巻 直人
東京工業大学
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Deveaud Benoit
Physics Department. Imo Swiss Federal Institute Of Technology Lausanne
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Wang W
National Tainan Teachers Coll. Tainan Twn
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WATANABE Masahito
Fundamental Research Laboratories, NEC Corporation
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WANG Wei
Fundamental Research Laboratories, NEC Corporation
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Toyoda K
Science University Of Tokyo
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Hibiya T
Fundamental Research Laboratories Nec Corporation
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Sugaya Takeyoshi
Electrotechnical Laboratory
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森 郁
東京工業大学 工学部
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Sugaya T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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舟山 敏之
東京工業大学
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河野 義史
東京工業大学 工学部
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寺地 耐志
東京工業大学
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Hibiya Taketoshi
Fundamental Research Laboratories Nec Corporation
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Wang Wei
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University
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WATANABE Masanobu
Electrotechnical Laboratory
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大里 齊
名工大
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大里 齊
名古屋工大 大学院
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ODA Toshiatsu
Faculty of Engineering, Hiroshima University
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Oda Toshiatsu
Faculty Of Engineering Hiroshima Kokusai Gakuin University
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JINEN Keisuke
Dept. of Electronics and Applied Physics, Tokyo Inst. of Tech.
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KIKUCHI Takeshi
Dept. of Electronics and Applied Physics, Tokyo Inst. of Tech.
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WATANABE Masahiro
Dept. of Electronics and Applied Physics, Tokyo Inst. of Tech.
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ASADA Masahiro
Dept. of Electronics and Applied Physics, Tokyo Inst. of Tech.
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WATANABE Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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IKETANI Yoshifumi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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ASADA Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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OKADA Takumi
Tokai University Junior College
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Watanabe Masaya
Department Of Electrical And Electronic Engineering Faculty Of Engineering And Resource Science Akit
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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OHSATO Hitoshi
Department of Materials Science and Engineering Institute of Nagoya Institute of Technology
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Matsubara Kazuo
Kobelco Research Institute Inc.
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WATANABE Mahiko
Department of Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University
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TAKIYAMA Ken
Department of Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University
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Takiyama K
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Takiyama Ken
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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MOROHASHI Isao
National Institute of Advanced Industrial Science and Technology
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YASUHIRA Tetsutarou
CREST-Japan Science and Technology Corporation (JST)
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KOMORI Kazuhiro
CREST-Japan Science and Technology Corporation (JST)
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AKIMOTO Ryoichi
CREST-Japan Science and Technology Corporation (JST)
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OKADA Takumi
National Institute of Advanced Industrial Science and Technology (AIST)
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OGAWA Hirotaka
Faculty of Science and Technology, Meijo University, JAPAN
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KAN Akinori
Faculty of Science and Technology, Meijo University, JAPAN
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Iketani Yoshifumi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Okamoto Yasunori
Advanced Technology Laboratory Kubota Corporation
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KAI Yoshiki
Graduate School of Engineering Science, Osaka University
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Asada Masahiro
Dept. Of Electronics And Applied Physics Tokyo Inst. Of Tech.
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EGUCHI Minoru
Fundamental Research Laboratories, NEC Corporation
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TANAHASHI Takahiko
Faculty of Science and Technology, Keio University
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Watanabe Masahiro
Faculty of Science and Engineering, Meijo Unviersity
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Hatanaka Shigeru
Faculty of Science and Engineering, Meijo Unviersity
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Itatani Taro
National Institute Of Advanced Industrial Science And Technology (aist)
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Itatani Taro
National Institute Of Advanced Industrial Science And Technology
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Ogawa Hirotaka
Faculty Of Engineering Meijo University
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Ohsato Hitoshi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya Institute Of T
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Matsubara K
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
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Matsubara Koji
Kansai Advanced Research Center Communications Research Laboratory
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Kai Yoshiki
Graduate School Of Engineering Science Osaka University
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Yamamoto Hiroshi
Graduate School of Science and Engineering, Tokyo Institute of Technology
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SHIMURA Hisashi
Shonan Institute of Technology
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IKEDA Hirokazu
Advanced Technology Laboratory, KUBOTA Corporation
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TSUJIKURA Shinya
Advanced Technology Laboratory, KUBOTA Corporation
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YAMAMOTO Masami
Advanced Technology Laboratory, KUBOTA Corporation
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MATSUBARA Kensuke
Kansai Advanced Research Center, Communications Research Laboratory
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Eguchi Minoru
Fundamental Research Laboratories Nec Corporation
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Maeda Yasuhisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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FUKUNAGA Yasuhiko
Shonan Institute of Technology (SIT)
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HAYASAKA Kazuhiro
Kansai Advanced Research Center, Communications Research Laboratory
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Tanahashi T
Faculty Of Science And Technology Keio University
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Tanahashi Takahiko
Faculty Of Science And Technology Keio University
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Jinen Keisuke
Dept. Of Electronics And Applied Physics Tokyo Inst. Of Tech.
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Yamamoto Masami
Advanced Technology Laboratory Kubota Corporation
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Kan Akinori
Department Of Sensory And Motor System Medicine Faculty Of Medicine University Of Tokyo
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OKANO Shun-ichi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tsujikura Shinya
Advanced Technology Laboratory Kubota Corporation
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Hayasaka Kazuhiro
Kansai Advanced Research Center Communications Research Laboratory
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Okano Shun-ichi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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FUNAYAMA Toshiyuki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TERAJI Taishi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SAKAMAKI Naoto
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Teraji Taishi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Sakamaki Naoto
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Kikuchi Takeshi
Dept. Bioinfomatics Col. Life Sci. Ritsumeikan Univ.
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Hatanaka Shigeru
Faculty Of Science And Engineering Meijo Unviersity
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Kan Akinori
Faculty Of Science And Technology Meijo University
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Kikuchi Takeshi
Dept. Of Electronics And Applied Physics Tokyo Inst. Of Tech.
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Tanahashi Takahiko
Faculty Of Engineering Keio University
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Ikeda Hirokazu
Advanced Technology Laboratory Kubota Corporation
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Funayama Toshiyuki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yamamoto H
Graduate School Of Engineering Science Osaka University
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Yamamoto Hiroshi
Graduate School Of Environmental Science Hokkaido University
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Watanabe Masahiro
Faculty Of Environmental Earth Science Hokkaiod University:center For Climate System Research The University Of Tokyo
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Watanabe Masahiro
Dept. Of Electronics And Applied Physics Tokyo Inst. Of Tech.
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Yamamoto Hiroshi
Graduate School Of Engineering Utsunomiya University
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Kikuchi Takeshi
Dept. Bioinf, Coll. Life Sci., Ritsumeikan Univ.
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浅田 雅洋
東京工業大学大学院総合理工学研究科:独立行政法人科学技術振興機構CREST
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Yamamoto Hiroshi
Graduate School of Engineering Science, Osaka University
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Komori Kazuhiro
CREST, Japan Science and Technology Corporation (JST), 1-6-1 Takezono, Tsukuba, Ibaraki 305-0032, Japan
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Watanabe Masahiro
Dept. of Computer Science, Shizuoka University
著作論文
- Si基板上弗化物系サブバンド間遷移レーザの理論解析
- Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
- Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
- ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
- Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
- ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
- Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
- Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-Subband Quantum Cascade Structure on Si substrate (Special Issue: Solid State Devices & Materials)
- Room Temperature Electroluminescence of CdF_2/CaF_2 Inter-subband Transition Laser Structures grown on Si Substrate
- ローカルエピタキシー法によるCoSi_2/CaF_2三重障壁共鳴トンネルダイオードの微分負性抵抗特性(量子効果デバイス及び関連技術)
- ローカルエピタキシー法によるCoSi_2/CaF_2三重障壁共鳴トンネルダイオードの微分負性抵抗特性(量子効果デバイス及び関連技術)
- Si(100)基板上に形成されたCdF_2/CaF_2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性(量子効果デバイス及び関連技術)
- Si(100)基板上に形成されたCdF_2/CaF_2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性(量子効果デバイス及び関連技術)
- ローカルエピタキシー法により形成されたシリコン基板上CdF_2/CaF_2共鳴トンネルダイオード微分負性抵抗特性の構造依存性
- ローカルエピタキシー法により形成されたシリコン基板上CdF_2/CaF_2共鳴トンネルダイオード微分負性抵抗特性の構造依存性
- Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
- ナノ領域成長によるSi(111)及びSi(100)基板上CdF_2/CaF_2共鳴トンネルダイオード
- ナノ領域成長によるSi(111)及びSi(100)基板上CdF_2/CaF_2共鳴トンネルダイオード
- Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
- Epitaxial Growth and Electrical Characteristics of CaF_2/Si/CaF_2 Resonant Tunneling Diode Structures Grown on Si(111)1°-off Substrate
- Si-CaF_2及びCdF_2-CaF_2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード
- Si-CaF_2及びCdF_2-CaF_2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード
- Si基板上Si/CdF_2量子井戸構造を用いた電界効果型量子効果デバイス
- Si基板上Si/CdF_2量子井戸構造を用いた電界効果型量子効果デバイス
- Direct Measurement of Sheath Electric Field Distribution in Front of Substrate in Electron Cyclotron Resonance Plasma by Laser-Induced Fluorescence Technique
- 『マイクロ波シミュレータの基礎』, 山下榮吉(監修), 電子情報通信学会, 2004-03, A5判, 定価(本体5,000円+税)
- シリコン基板上に形成した金属/絶縁体量子効果デバイス
- 金属(CoSi_2)/絶縁体(CaF_2)/Siヘテロ接合量子効果デバイス
- 金属/絶縁体ヘテロ接合電子デバイス
- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
- Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
- Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Motional Resonances of Sympathetically Cooled ^Ca^+, Zn^+, or Ga^+ Ions in a Linear Paul Trap : Atoms, Molecules, and Chemical Physics
- Control of Oxygen-Atom Transport in Silicon Melt during Crystal Growth by Electromagnetic Force
- Three-Dimensional Simulation of Silicon Melt Flow in Electromagnetic Czochralski Crystal Growth
- Microwave Dielectric Properties of Sm_2Ba(Cu_Zn_x)O_5(x = 0 to 1) Solid Solutions
- Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF_2 on Si(111)Substrate Prepared by Rapid Thermal Annealing
- Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF_2 Epilayers on Si(111) with Rapid Thermal Anneal
- Terahertz Wave Generations from Multi-Quantum Well with Transverse Electric Field
- Development of a Tunable 209 nm Continuous-Wave Light Source Using Two-Stage Frequency Doubling of a Ti : Sapphire Laser(Optics and Quantum Electronics)
- Ultrafast Coherent Control of Excitons Using Pulse-Shaping Technique
- Manipulation of Coherent Exciton towards Novel Ultrafast Devices
- Laser Cooling of Ca^+ with an External-Cavity Ultraviolet Diode Laser
- Epitaxial Growth and Ultraviolet Photoluminescence of CaF_2/ZnO/CaF_2 Heterostructures on Si(111)
- CaF_2/CdF_2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
- Si(111)上CdF_2-CaF_2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性
- ED2000-56 / SDM2000-56 Si(111)上CdF_2-CaF_2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性